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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：28.1 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：105W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y07-30B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an LFPAK (SOT669) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 4.97 mΩ at VGS = 5 V and ID = 25 A. It supports a total power dissipation of 105 W and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for automotive critical applications per AEC standards
- Compatible with logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring high current handling in compact surface-mount formats. The logic level gate drive capability simplifies control circuitry by allowing direct interfacing with standard logic outputs without additional driver stages. Ensure thermal management strategies account for the 105 W dissipation rating and the thermal resistance characteristics defined in the datasheet to maintain junction temperatures within safe operating limits during peak load conditions.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel TrenchMOS logic level FETs. These devices are engineered using High-Performance Automotive (HPA) technology to meet rigorous reliability standards. The LFPAK package provides superior thermal performance compared to traditional packages, making it suitable for power density constrained automotive and industrial applications where efficient heat dissipation is critical for long-term stability.
Replacement Considerations
Direct substitutes include other Nexperia BUK9Y series parts with matching voltage and current ratings, such as BUK9Y14-40B or BUK9Y30-75B, provided pin compatibility and electrical parameters align with the design requirements. Verify that alternative components also meet AEC-Q101 qualification if automotive usage is intended.
