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Product Detailed Parameters
- Description：MOSFET N-CH 100V 14.8A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：99mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1139 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：59W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y104-100B is an N-channel TrenchMOS logic level FET designed for automotive critical applications. It features a drain-source voltage of 100 V and a continuous drain current of 14.8 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 99 mΩ at VGS = 10 V and 104 mΩ at VGS = 5 V, both measured at 25 °C junction temperature. Total power dissipation reaches 59 W at 25 °C. The component supports a junction temperature range from -55 °C to 175 °C and is housed in an SOT669 (LFPAK) plastic surface-mounted package.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Qualified for automotive critical applications per AEC-Q101 standards
- Compatible with logic level gate drive sources
- Operates reliably in thermally demanding environments up to 175 °C
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- DC-to-DC converters
- General purpose power switching
- Solenoid drivers
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the SOT669 LFPAK footprint aligns with the target PCB design constraints. Ensure thermal management strategies account for the specified junction-to-mounting base thermal resistance under expected load conditions. Cross-reference the latest product data sheet revision to confirm current manufacturing status and any potential specification updates.
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with logic-level compatibility. The low RDS(on) minimizes power loss in high-current paths. Verify that the gate drive voltage meets the threshold requirements for full enhancement. Consider the thermal performance limits when determining heat sinking needs for continuous operation near the maximum current rating.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced silicon process technology to enhance performance. The BUK9Y series is specifically engineered for automotive reliability, meeting stringent quality standards. The LFPAK package provides superior thermal dissipation compared to traditional plastic packages, supporting higher power densities in compact designs.
Replacement Considerations
Check for direct substitutes within the BUK9Y series offering similar voltage and current ratings. Verify pinout compatibility with the SOT669 package if replacing existing components. Ensure any alternative device meets the same AEC-Q101 qualification requirements for automotive use.
