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The Nexperia BUK9Y11-80EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 80 V and a continuous drain current of 84 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 11 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 194 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Ensure the requested part number matches the exact marking code '91180E' found on the physical component. Confirm compliance requirements such as RoHS status directly from the manufacturer's latest product data sheet before finalizing procurement orders.
Select this component when designing circuits requiring low on-state resistance at logic-level gate voltages. The LFPAK56 package provides efficient thermal management for high-current applications. Verify that the system operates within the 80 V drain-source voltage limit and accounts for the 194 W power dissipation capability based on the actual mounting base temperature conditions.
This device belongs to the Nexperia BUK9Y series of N-channel MOSFETs. It utilizes TrenchMOS technology to achieve low RDS(on) values. The LFPAK56 package is a plastic single-ended surface-mounted type designed for robust soldering and thermal performance in compact electronic designs.
Consult official Nexperia cross-reference lists for verified substitutes. Ensure any replacement maintains the same LFPAK56 footprint and meets or exceeds the 80 V voltage rating and 11 mΩ on-resistance specifications.
The gate-source threshold voltage is rated at greater than 0.5 V at a junction temperature of 175 °C.
Yes, the product has been designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.