BUK9Y113-100E,115

Overview

The BUK9Y113-100E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) plastic surface-mounted package. It features a drain-source voltage rating of 100 V and a maximum continuous drain current of 12 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 113 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 45 W under standard thermal conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities for robust operation.

Feature Summary

• Qualified to the AEC-Q101 automotive standard for high-performance applications
• Features true logic level gate characteristics with threshold voltage maintained above 0.5 V at elevated temperatures
• Capable of handling thermally demanding environments due to a 175 °C maximum junction temperature rating
• Includes repetitive avalanche rating for enhanced ruggedness

Applications

• 12 V, 24 V, and 48 V automotive systems
• Motor, lamp, and solenoid control circuits
• Transmission control modules
• Ultra-high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment remains within the specified absolute maximum ratings, particularly regarding junction temperature limits and avalanche energy constraints. Ensure proper thermal management design aligns with the provided transient thermal impedance data to maintain reliability during pulsed operations.

Selection Notes

Select this component when automotive qualification and high thermal stability are required. The logic level gate drive allows direct interfacing with standard microcontrollers or drivers without requiring additional level shifting circuitry. Consider the low on-state resistance for minimizing conduction losses in power switching applications where efficiency is critical.

Part Context

This device belongs to Nexperia's portfolio of TrenchMOS logic level MOSFETs designed for automotive use. It utilizes advanced trench technology to achieve low on-resistance within a compact LFPAK56 package. The product is specifically engineered to meet the rigorous demands of modern vehicle electronics, offering a balance of electrical performance and thermal durability.

Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.