BUK9Y12-40E,115

Overview

The Nexperia BUK9Y12-40E,115 is an N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8/SOT669) package. It features a drain-source voltage of 40 V and a continuous drain current of 52 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 12 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 65 W under standard conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Qualified to AEC-Q101 automotive standards for high-performance applications
• True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
• Repetitive avalanche rated for robust switching performance
• Designed for thermally demanding environments with 175 °C operating capability

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring automotive-grade reliability and low on-resistance in compact surface-mount packages. The logic-level gate drive simplifies interface with microcontrollers or standard drivers. Ensure thermal management accommodates the specified power dissipation limits and junction temperature constraints during peak load operations.

Part Context

This part belongs to Nexperia's BUK9Y series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low RDS(on) within the LFPAK56 footprint. The series targets applications needing efficient power switching in constrained spaces while meeting stringent automotive qualification requirements.

Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that alternative devices meet the same AEC-Q101 qualification status if automotive reliability is required. Confirm gate charge and threshold voltage specifications match the existing driver circuit capabilities.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum DC gate-source voltage is ±10 V, while the pulsed rating extends to ±15 V.

Is the device suitable for high-temperature environments?

Yes, the MOSFET is rated for junction temperatures up to 175 °C and maintains logic-level functionality at these elevated temperatures.

How is the mounting base connected internally?

The mounting base (Pin mb) is internally connected to the Drain terminal to facilitate efficient heat dissipation from the package.