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Product Detailed Parameters
- Description：MOSFET N-CH 40V 33A LFPAK56
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：824 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y21-40E is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in a plastic single-ended surface-mounted LFPAK56 (Power-SO8) package, also designated as SOT669. It features a drain-source voltage rating of 40 V and a continuous drain current capability of 33 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 21 mΩ at VGS = 5 V and ID = 10 A. Designed for high-performance automotive applications, it complies with the AEC-Q101 standard and supports junction temperatures up to 175 °C.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Rated for repetitive avalanche energy operation
- Maintains true logic level gate functionality with threshold voltage greater than 0.5 V at 175 °C
- Suitable for thermally demanding environments due to 175 °C operating rating
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component status aligns with current production schedules. Ensure design reviews account for the absolute maximum ratings provided in the datasheet to prevent permanent damage during operation.
Selection Notes
Select this component when designing circuits requiring robust automotive-grade N-channel switching with low on-resistance. Consider the thermal characteristics and safe operating area limits for high-current applications. Verify compatibility with logic-level drive voltages, particularly under elevated temperature conditions where threshold voltage stability is critical.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel MOSFETs designed for automotive use. The series employs TrenchMOS technology to achieve low RDS(on) within compact packages. These devices are engineered to meet stringent automotive qualification standards while providing efficient power switching capabilities for various vehicle subsystems.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or nominal voltage ratings without verifying electrical parameters and pin configurations.
