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Product Detailed Parameters
- Description：MOSFET N-CH 75V 34A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：28mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2070 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：85W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y30-75B,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an SOT669 (LFPAK) plastic package. Designed for automotive critical applications, it features a drain-source voltage of 75 V and a continuous drain current of 34 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 30 mΩ at VGS=5V and ID=15A. It supports a total power dissipation of 85 W and operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- Low conduction losses achieved through low on-state resistance
- Compliant with Q101 standards for automotive reliability
- Compatible with logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring logic level gate drive compatibility and high thermal resilience. The SOT669 package provides efficient heat dissipation via the mounting base connected to the drain. Ensure gate-source voltage limits are respected and consider derating continuous current based on actual mounting base temperatures rather than ambient conditions.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel TrenchMOS logic level FETs. These devices are engineered using High Performance Automotive (HPA) technology and are qualified to AEC standards. The series targets robust performance in automotive environments where low conduction losses and high temperature operation are critical requirements.
Replacement Considerations
Check pinout compatibility and electrical parameters against alternatives. Verify that substitute components meet the same AEC-Q101 qualification and support the required 175 °C junction temperature rating for equivalent automotive reliability.
FAQ
Is the BUK9Y30-75B suitable for logic level gate drives?
Yes, the datasheet explicitly states it is suitable for logic level gate drive sources.
What is the maximum operating junction temperature?
The maximum junction temperature is 175 °C.
