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Product Detailed Parameters
- Description：MOSFET N-CH 60V 16.7A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：16.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：52mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.1 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：715 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：37W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y59-60E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 60 V and a continuous drain current of 16.7 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 59 mΩ at VGS = 5 V and ID = 5 A. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified for high performance automotive applications under the AEC Q101 standard.
- Features true logic level gate operation with a threshold voltage greater than 0.5 V at 175 °C.
- Designed for thermally demanding environments with a maximum junction temperature rating of 175 °C.
- Capable of handling repetitive avalanche energy conditions.
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when low gate drive requirements are necessary for 12 V automotive loads. The logic level characteristic ensures full enhancement at standard logic voltages. Consider the thermal resistance from junction to mounting base of 4.03 K/W for heat sink design. Ensure the application stays within the repetitive avalanche limits if inductive switching is involved.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel MOSFETs. These devices are engineered using TrenchMOS technology to provide low conduction losses. The LFPAK56 package offers a compact surface-mount solution suitable for automated assembly processes while providing robust thermal performance for power electronics applications.
Replacement Considerations
Check pinout compatibility and electrical parameters against existing designs. Verify that the replacement device meets or exceeds the required VDS, ID, and RDS(on) specifications. Confirm that the package dimensions match the PCB footprint to ensure mechanical fit without modification.
