BUK9Y7R6-40E/DMANX

Description：MOSFET
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:47e4c537e082 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK9Y7R6-40E/DMANX

Overview

The BUK9Y7R6-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56 (Power-SO8) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards and supports junction temperatures up to 175 °C. The device features a drain-source voltage of 40 V and a continuous drain current of 79 A at 25 °C mounting base temperature. It exhibits a maximum on-state resistance of 7.6 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 95 W under specified conditions.

Feature Summary

Compliant with AEC-Q101 qualification standards for automotive use
Rated for repetitive avalanche energy operation
Operates in thermally demanding environments with a 175 °C rating
Features true logic level gate characteristics maintaining threshold voltage above 0.5 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details. Confirm that the component matches the required AEC-Q101 qualification status for your target application. Ensure thermal management designs account for the specified junction temperature limits and power dissipation ratings provided in the datasheet.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high current handling capabilities. The low on-state resistance supports efficient power switching in compact form factors. Verify that the gate drive voltage aligns with the logic level specifications to ensure optimal conduction characteristics across the full operating temperature range.

Part Context

This part belongs to the Nexperia BUK9Y series of N-channel MOSFETs. These devices are engineered using advanced TrenchMOS technology to deliver superior performance in power switching applications. The LFPAK56 package provides enhanced thermal conductivity compared to standard surface-mount options, facilitating effective heat dissipation in space-constrained PCB layouts.