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Product Detailed Parameters
- Description：MOSFET N-CH 40V 79A LFPAK56
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：16.4 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2403 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y7R6-40E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 40 V and a continuous drain current of 79 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 7.6 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 95 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with the AEC-Q101 standard for automotive applications
- Capable of operating reliably in thermally demanding environments due to a 175 °C junction temperature rating
- Features true logic level gate characteristics with a threshold voltage greater than 0.5 V at elevated temperatures
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component status aligns with current production availability. Ensure compliance with relevant environmental directives such as RoHS and REACH before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring low on-state resistance and robust thermal performance in compact surface-mount layouts. The logic level gate drive simplifies interface requirements with standard microcontrollers or drivers. Evaluate thermal management strategies to maintain junction temperatures within the specified operational limits during peak load conditions.
Part Context
This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs designed for high-performance switching applications. The LFPAK56 package provides enhanced thermal dissipation compared to traditional plastic packages, supporting higher current densities. The product integrates advanced trench technology to minimize conduction losses while maintaining fast switching speeds.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations, thermal resistance values, and electrical ratings to ensure functional compatibility without modifying existing board layouts or driver circuits.
