BUK9Y8R5-80EX

Overview

The BUK9Y8R5-80EX is an N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 80 V and a maximum on-state resistance of 8.5 mΩ at VGS = 5 V and ID = 25 A. The device supports a continuous drain current of 100 A at a mounting base temperature of 25 °C, with a total power dissipation capability of 238 W under the same conditions. It operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

• Qualified for high-performance automotive applications in compliance with the AEC Q101 standard.
• Capable of handling repetitive avalanche energy ratings for robust operation in demanding environments.
• Features true logic level gate drive characteristics, maintaining a threshold voltage greater than 0.5 V even at elevated temperatures up to 175 °C.

Applications

• 12 V, 24 V, and 48 V automotive systems
• Motors, lamps, and solenoid control circuits
• Transmission control modules
• Ultra-high performance power switching

Procurement Notes

Verify that the specific ordering suffix matches the required packaging configuration, as variations exist between tape-and-reel and cut-tape formats. Confirm the component status against the most recent Nexperia product data sheet to ensure availability and compliance with current RoHS directives before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring low conduction losses and high current handling capabilities within an 80 V system. The LFPAK56 package provides excellent thermal performance suitable for space-constrained designs. Ensure the gate drive voltage aligns with the logic level specifications to maximize efficiency and minimize heat generation during switching operations.

Part Context

This device belongs to the Nexperia BUK9Y series of N-channel MOSFETs designed specifically for automotive-grade reliability. The series utilizes advanced TrenchMOS technology to achieve superior figure-of-merit values compared to standard planar devices. These components are engineered to meet the rigorous environmental and electrical standards required for modern vehicle electronics.

Replacement Considerations

Direct substitutes include other Nexperia BUK9Y series parts such as BUK9Y41-80E or BUK9Y11-80EX, provided they meet the specific current and resistance requirements of the application. Verify pinout compatibility and thermal resistance parameters when considering alternative packages or manufacturers.

FAQ

What is the maximum non-repetitive drain-source avalanche energy rating?

The device is rated for 148 mJ of non-repetitive drain-source avalanche energy under specified test conditions.

How does the gate-source threshold voltage behave at high temperatures?

The component maintains a true logic level gate characteristic with a VGS(th) rating of greater than 0.5 V at a junction temperature of 175 °C.