Single Bipolar Transistors BUL705 product image

BUL705

$1.28
  • Description:TRANS NPN 400V 5A TO-220
  • Series:-

SKU:fa7c76d51c5e Category: Brand:

  
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BUL705 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN 400V 5A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BUL705

  • Description:TRANS NPN 400V 5A TO-220
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 1A, 4A
  • Current - Collector Cutoff (Max):250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:16 @ 2A, 5V
  • Power - Max:80 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BUL705

BUL705

Single Bipolar Transistors Overview

The BUL705 is a high-voltage fast-switching NPN power transistor manufactured using Multi-Epitaxial Planar technology. It features a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide Reverse Biased Safe Operating Area (RBSOA). The device offers low spread of dynamic parameters and minimum lot-to-lot variation for reliable operation. Key electrical ratings include a collector-emitter voltage (VCEO) of 400 V, a collector current (IC) of 5 A, and total dissipation of 80 W at 25°C case temperature. It is fully characterized at 125 °C.

Single Bipolar Transistors Feature Summary

  • High-speed switching capability enabled by Multi-Epitaxial Planar technology
  • Wide Reverse Biased Safe Operating Area (RBSOA)
  • Low parameter spread for consistent performance across lots

Single Bipolar Transistors Applications

  • Electronic ballast for fluorescent lighting
  • Power Factor Correction (PFC) solutions in HF ballast half-bridge voltage fed circuits

Single Bipolar Transistors Procurement Notes

Verify component status as the datasheet explicitly identifies the BUL705 as an obsolete product. Confirm availability through authorized distributors or surplus channels. Ensure the TO-220 package matches design requirements. Check for ECOPACK lead-free compliance if environmental regulations apply. Validate that sourcing from secondary markets meets quality standards for critical applications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage NPN switching with specific attention to turn-off characteristics. The device is optimized for medium voltage applications where low dynamic parameter spread is critical. Consider thermal management capabilities given the 80 W dissipation rating. Evaluate compatibility with existing gate drive circuits due to the specified storage and fall times under inductive load conditions.

Single Bipolar Transistors Part Context

This NPN power transistor belongs to STMicroelectronics' discrete semiconductor portfolio focused on power switching applications. It utilizes advanced planar edge termination techniques typical of the manufacturer's high-voltage lineup. The component serves as a specialized solution for lighting control systems rather than general-purpose switching.

Single Bipolar Transistors Replacement Considerations

As the BUL705 is marked obsolete, identify equivalent NPN transistors with comparable VCEO ratings around 400 V and IC ratings near 5 A. Verify that potential substitutes offer similar switching speeds and RBSOA characteristics. Ensure pinout compatibility with the TO-220 package to facilitate board-level replacement without redesign.

BUL705BUL705
$1.28
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