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The BUP213 is a single-channel IGBT in the TO-220 AB package, rated for 1200 V collector-emitter voltage and 32 A DC collector current at 90 °C. It features low forward voltage drop, high switching speed, and low tail current. The device is latch-up free and avalanche rated with an EAS of 22 mJ. Thermal resistance from chip to case is ≤ 0.63 K/W. Operating junction temperature ranges from -55 °C to +150 °C.
Verify component authenticity by matching the ordering code Q67040-A4407 against official Infineon records. Confirm the TO-220 AB package dimensions and pinout configuration (Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter) align with your PCB layout requirements. Ensure thermal management solutions accommodate the specified power dissipation limits.
Select this component for designs requiring robust 1200 V blocking capability and moderate current handling up to 32 A. Consider the specific gate threshold voltage range and saturation characteristics when designing the drive circuitry. Evaluate the thermal resistance and safe operating area curves to ensure reliable operation under expected load conditions and ambient temperatures.
This IGBT belongs to the BUP series designed for general-purpose power switching applications. It utilizes standard bipolar technology optimized for low conduction losses and fast turn-off times. The component is housed in a widely used through-hole package suitable for prototyping and industrial equipment manufacturing.
No verified public substitute part numbers are available.