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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUZ100S-E3045A is an N-channel power MOSFET manufactured by Infineon Technologies. It features a silicon technology base and is designed for through-hole installation in a TO-220 package. The device supports a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 100 A. Key electrical parameters include a maximum on-resistance (RDS(on)) of 3.9 mΩ, a gate-source voltage (VGS) rating of 20 V, and a threshold voltage (VGS(th)) of 2 V. The total gate charge (QG) is 117 nC. It operates within a temperature range of -55 °C to +175 °C with a power dissipation capability of 214 W.
Feature Summary
- N-channel enhancement mode construction utilizing silicon technology
- High current handling capability suitable for power switching applications
- Low on-state resistance for efficient conduction
- Robust thermal performance for high-power dissipation environments
Applications
- DC-DC converters
- Motor control circuits
- Power supply output stages
Procurement Notes
Verify the exact suffix E3045A against official Infineon documentation to confirm package type and specific electrical tolerances. Ensure the procurement channel provides valid RoHS compliance data. Cross-reference the manufacturer part number with authorized distributor listings to avoid counterfeit components. Confirm that the TO-220 package variant matches the design requirements for thermal management and mounting constraints.
Selection Notes
Select this component when a 100 V, 100 A N-channel MOSFET is required in a through-hole configuration. The low RDS(on) value makes it suitable for applications prioritizing conduction efficiency. Verify that the gate drive circuitry can handle the 117 nC gate charge requirement. Ensure the operating environment stays within the specified -55 °C to +175 °C junction temperature range for reliable operation.
Part Context
This part belongs to the general category of discrete power semiconductors produced by Infineon Technologies. It is classified as a single N-channel MOSFET intended for high-current switching tasks. The product line focuses on silicon-based power devices optimized for industrial and automotive-grade reliability standards.
Replacement Considerations
Consult official Infineon replacement guides for direct equivalents. Verify pinout compatibility and thermal characteristics before substituting with other manufacturers' parts.
