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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id：4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2375 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：170W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
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Overview
The BUZ100S is an N-channel enhancement mode vertical DMOS FET transistor manufactured by Infineon Technologies. Designed for high voltage applications and switching circuits, it utilizes SIPMOS technology. The device features a Drain-Source voltage (VDS) of 55 V and a continuous drain current (ID) of 77 A at case temperature. It exhibits a low Drain-Source on-state resistance (RDS(on)) of 0.01 Ω. The component is housed in a PG-TO220-3-1 through-hole package with a thermal dissipation capacity of 170 W at case temperature.
Feature Summary
- N-channel enhancement mode vertical DMOS construction
- Low on-state resistance for efficient power switching
- High voltage capability suitable for demanding applications
Applications
- High voltage switching circuits
- Power conversion systems
- Industrial motor control
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications if applicable. Confirm that the PG-TO220-3-1 package matches your PCB footprint requirements. Cross-reference the datasheet electrical characteristics against your circuit design limits to ensure compliance with maximum ratings.
Selection Notes
Select this component when a robust N-channel MOSFET with 55 V rating and high current handling is required. Consider the thermal management needs associated with the TO-220 package and 170 W dissipation rating. Ensure gate drive voltages remain within the specified ±20 V limit to prevent damage.
Part Context
This part belongs to Infineon's SIPMOS power transistor family, known for reliability in power electronics. It serves as a discrete solution for medium-power switching tasks where through-hole mounting is preferred. The device complements other components in power supply and motor drive designs.
Replacement Considerations
Check for direct pin-compatible alternatives such as the BUZ110S, which shares similar voltage and package characteristics but may differ slightly in current ratings. Verify all electrical parameters before substitution.
