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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs：185 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
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Overview
The BUZ111S is an N-channel SIPMOS power transistor manufactured by Infineon Technologies. It features a drain-source voltage rating of 55V and a continuous drain current capacity of 80A at case temperature. The device exhibits a maximum on-state resistance of 0.008 ohms. It is housed in a TO-220 package with three pins and a tab, designed for through-hole mounting. The component supports a thermal dissipation capability of 300W under specified case conditions.
Feature Summary
- Utilizes Infineon's SIPMOS technology for enhanced power switching performance
- Designed for high-current applications with low on-state resistance
- Robust thermal management capabilities suitable for power electronics
Applications
- Power switching circuits
- DC-DC converters
- Motor control systems
Procurement Notes
Verify the specific ordering code against the official Infineon datasheet to ensure compatibility with required voltage and current ratings. Confirm that the TO-220 package dimensions match your PCB layout constraints. Check for any suffix variations that may indicate different tape-and-reel or tube packaging options. Ensure the supplier provides traceability documentation consistent with automotive or industrial standards if applicable.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required. The 55V rating suits 48V or lower battery systems. The 80A current handling and low Rds(on) make it efficient for high-power density designs. Consider thermal resistance values for heatsink sizing in enclosed environments.
Part Context
The BUZ111S belongs to Infineon's SIPMOS family, which integrates superjunction technology into planar MOSFET structures. This series is known for combining low conduction losses with robust avalanche ruggedness. It serves as a legacy or alternative option in power conversion designs where standard planar technologies are insufficient for current density requirements.
Replacement Considerations
Check for direct cross-reference part numbers from Infineon or other manufacturers offering identical 55V/80A specifications in TO-220 packages. Verify pinout compatibility and thermal characteristics before substitution.
