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Product Detailed Parameters
- Description：MOSFET N-CH 50V 80A TO263
- Series：-
- Mfr：Siemens
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：80A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：300W
- Operating Temperature：175°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUZ111SLE3045A is a SIPMOS power transistor manufactured by Siemens. It is an N-channel silicon metal-oxide semiconductor field-effect transistor (MOSFET) housed in a TO-263AB surface-mount package. The device supports a continuous drain current of 80A at 25°C and operates with a drain-to-source voltage of 50V to 55V. It features a maximum power dissipation of 300W and an operating temperature range up to 175°C, with a typical on-resistance of 0.01 ohms.
Feature Summary
- Utilizes SIPMOS technology for high-efficiency power switching
- Designed for robust surface-mount integration via TO-263 package
- Capable of handling high continuous drain currents
Applications
- Power supply circuits requiring high current handling
- Motor control applications
- General-purpose power switching systems
Procurement Notes
Verify the manufacturer origin, as Siemens' semiconductor assets were acquired by Infineon Technologies. Ensure the specific suffix SLE3045A matches the required packaging and tape-and-reel specifications if applicable. Confirm RoHS compliance status and check for any obsolescence notices from current authorized distributors or the successor entity.
Selection Notes
Select this component when a single N-channel MOSFET with high current capacity is required for surface-mount designs. The TO-263 package facilitates thermal management for moderate power levels. Consider the 50V/80A rating against circuit demands and ensure the gate drive characteristics align with the control logic voltage levels used in the application design.
Part Context
This part belongs to the Siemens SIPMOS family of power transistors, which are known for low on-resistance and fast switching speeds. Following corporate restructuring, these components are often associated with Infineon's portfolio. The BUZ111 series represents a standard offering for general power electronics applications before the brand transition.
Replacement Considerations
Infineon Technologies acquired Siemens' semiconductor division; therefore, direct equivalents may be listed under Infineon branding. Verify pin compatibility and electrical parameters such as Rds(on) and Vgs(th) when substituting with other TO-263 N-channel MOSFETs from different manufacturers.
