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Product Detailed Parameters
- Description：MOSFET N-CH 200V 21A D2PAK
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUZ30AH3045AATMA1 is an N-channel power MOSFET from Infineon’s SIPMOS series, housed in a D2PAK-3 (TO-263-3) surface-mount package. It features a drain-source breakdown voltage of 200 V and a continuous drain current of 21 A at case temperature. Key electrical parameters include a maximum on-state resistance of 130 mΩ, forward transconductance of 6 S, rise time of 70 ns, and fall time of 90 ns. The device supports thermal dissipation up to 125 W.
Feature Summary
- Utilizes Infineon’s SIPMOS technology for robust power switching performance.
- Designed for high-current applications with optimized on-state resistance.
- Features fast switching characteristics with defined rise and fall times.
Applications
- Server power supply units
- AC-DC power conversion for telecommunications infrastructure
- Power adapters and chargers
Procurement Notes
Verify the component status as obsolete or active through official Infineon channels before procurement planning. Confirm that the D2PAK-3 package dimensions match your PCB footprint requirements. Ensure compatibility with the specified 200 V and 21 A operational limits for your specific circuit design to avoid reliability issues.
Selection Notes
Select this component when a 200 V N-channel MOSFET with moderate current handling is required in a surface-mount format. The SIPMOS technology offers a balance between conduction losses and switching speed. Consider the thermal management capabilities provided by the TO-263-3 package for heat dissipation in medium-power designs.
Part Context
This part belongs to Infineon’s broader portfolio of 85 V to 300 V N-channel power MOSFETs. These devices are engineered for low-, medium-, and high-power applications across various industries. The SIPMOS family focuses on providing reliable performance for general-purpose power switching tasks.
Replacement Considerations
Check for direct substitutes within the BUZ30A-H series or other Infineon SIPMOS devices with matching 200 V ratings and D2PAK-3 packages. Verify pinout compatibility and thermal characteristics before substituting.
