BUZ31

$0.79

Description：MOSFET N-CH 200V 14.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube

SKU:dedea12dc306 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 14.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：95W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

Download product information

BUZ31

Overview

The BUZ31 is an N-channel enhancement mode power transistor manufactured by Infineon Technologies. It features a PG-TO-220-3 package with a maximum drain-source breakdown voltage of 200 V and a continuous drain current of 14.5 A at 30°C case temperature. The device has a maximum on-resistance of 0.2 Ω and supports a pulsed drain current of 58 A. Power dissipation reaches 95 W at 25°C, with an operating junction temperature range from -55°C to +150°C. It includes avalanche ratings for periodic energy up to 9 mJ and single pulse energy up to 200 mJ.

Feature Summary

Avalanche-rated capability for robust operation under inductive load switching conditions
Integrated body diode with defined reverse recovery characteristics
Enhancement mode gate control requiring positive voltage for conduction

Applications

Inductive load switching circuits
Power amplification stages
DC-DC converter topologies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component matches the required thermal resistance values for your heat sink design. Confirm RoHS compliance status if restricted substances are a constraint for your assembly process.

Selection Notes

Select this component when a 200 V rating and moderate current handling are required in a through-hole package. Consider the thermal resistance limits and safe operating area curves for high-power applications. Evaluate the gate charge requirements against your driver capabilities to ensure adequate switching speeds without excessive losses.

Part Context

This part belongs to Infineon's SIPMOS family of power transistors. These devices utilize planar strip technology to achieve low on-resistance and fast switching speeds. The BUZ31 represents a standard discrete power solution designed for general-purpose industrial and commercial power electronics applications.

Replacement Considerations

Check datasheets for alternative N-channel MOSFETs with matching 200 V breakdown voltage and similar TO-220 footprint dimensions. Verify that substitute parts meet or exceed the 14.5 A continuous current rating and 0.2 Ω maximum on-resistance specifications.

FAQ

Is the BUZ31 rated for avalanche energy?

Yes, the device is avalanche-rated, supporting periodic avalanche energy up to 9 mJ and single pulse energy up to 200 mJ under specified test conditions.