BUZ31L

$0.81

Description：MOSFET N-CH 200V 13.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube

SKU:73d64124bfc7 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 13.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：200mOhm @ 7A, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：95W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

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BUZ31L

Overview

The BUZ31L is an N-channel enhancement mode power transistor from Infineon's SIPMOS family, housed in a PG-TO220-3 package. It features a drain-source breakdown voltage of 200 V and a continuous drain current rating of 13.5 A at 28 °C case temperature. The device exhibits a maximum on-resistance of 0.2 Ω at VGS = 5 V and ID = 7 A. It supports pulsed drain currents up to 54 A and offers avalanche-rated capability with single pulse energy handling up to 200 mJ. Power dissipation reaches 95 W at 25 °C, with an operating junction temperature range spanning -55 °C to +150 °C.

Feature Summary

Avalanche-rated design for robust operation under transient overload conditions
Logic level gate drive compatibility for efficient control interface integration
Integrated body diode with defined reverse recovery characteristics

Applications

High-side or low-side switching in DC motor control circuits
Power conversion stages in isolated and non-isolated converters
Inductive load switching applications requiring avalanche resilience

Procurement Notes

Verify the specific ordering code against the manufacturer datasheet to confirm package variant and Pb-free status. Ensure thermal management designs account for the specified RthJC and ambient resistance values. Confirm that gate drive voltages remain within the ±20 V absolute maximum rating to prevent dielectric breakdown during system operation.

Selection Notes

Select this component when a 200 V blocking capability and logic-level gate threshold are required for medium-power switching tasks. The TO-220 form factor facilitates through-hole mounting and heatsink attachment. Evaluate the safe operating area curves to ensure the application stays within thermal limits during both steady-state and pulsed operations.

Part Context

This part belongs to Infineon's SIPMOS power transistor series, utilizing planar trench technology for optimized on-resistance and switching performance. The BUZ31L represents a standard discrete solution within the broader portfolio of N-channel MOSFETs designed for industrial and consumer power electronics applications.

Replacement Considerations

Cross-reference with other SIPMOS devices offering similar 200 V ratings and TO-220 packaging. Verify pinout compatibility and thermal resistance specifications before substituting to ensure circuit integrity.

FAQ

Is the BUZ31L capable of handling avalanche energy?

Yes, the device is explicitly rated for avalanche operation, supporting periodic avalanche energy limited by Tjmax and single pulse energy up to 200 mJ under specified test conditions.