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Product Detailed Parameters
- Description：MOSFET N-CH 200V 7A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ73-E3046 is a single N-channel power MOSFET from Infineon Technologies, designed for general-purpose switching applications. It features a maximum drain-source voltage of 50 V and a continuous drain current of 18 A at 25 °C. The device exhibits a typical on-resistance of 0.07 Ω, ensuring low conduction losses. Packaged in the TO-220AB format, it supports surface mounting and offers robust thermal performance with a junction temperature rating up to 175 °C. This component is suitable for high-current DC-DC converters and motor control circuits.
Feature Summary
- N-channel enhancement mode silicon MOSFET technology
- Integrated body diode for inductive load commutation
- Lead-free plating compliant with RoHS standards
Applications
- General-purpose power switching
- DC-DC converter output stages
- Motor drive circuits
Procurement Notes
Verify the exact suffix against official Infineon documentation to confirm package type and tape/reel specifications. Ensure the ordering part number matches the required lead frame finish and packaging quantity. Cross-reference the datasheet revision date to validate electrical parameter tolerances before finalizing procurement orders.
Selection Notes
Select this component when a 50 V rated switch with moderate current handling is required. Compare the 0.07 Ω on-resistance against alternative packages to determine thermal management needs. Verify that the TO-220AB footprint aligns with the target PCB layout constraints and available heatsinking infrastructure.
Part Context
This device belongs to the standard discrete power MOSFET family, often associated with legacy Siemens or early Infineon product lines. It serves as a fundamental building block for medium-power electronics, bridging the gap between small-signal transistors and high-power IGBT modules.
Replacement Considerations
Consult official cross-reference guides for direct replacements such as the BUZ73A or equivalent 50 V/18 A TO-220 devices. Verify pinout compatibility and thermal resistance values before substituting.
