BVSS123LT1G

$0.35

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d0061906ecf8 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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BVSS123LT1G

Overview

The BVSS123LT1G is an N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in a surface-mount SOT-23 package. It features a maximum drain-source voltage of 100 Vdc and a continuous drain current of 0.17 Adc. The device has a maximum static drain-source on-resistance of 6.0 Ohms at VGS = 10 Vdc and ID = 100 mAdc. Total device dissipation is rated at 225 mW on an FR-5 board at 25°C ambient temperature. Junction temperature ranges from -55°C to +150°C.

Feature Summary

AEC-Q101 qualified with PPAP capability for automotive applications
ESD protection rated HBM Class 0A and MM Class M1B
Lead-free construction compliant with RoHS standards

Applications

Automotive electronic circuits requiring unique site control changes
General-purpose switching applications
Low-power signal amplification

Procurement Notes

Verify the specific ordering suffix matches the required qualification level. Confirm that the AEC-Q101 qualification and PPAP capability are explicitly documented for the requested part number variant. Ensure the component meets all environmental compliance requirements specified in the official datasheet before finalizing procurement specifications.

Selection Notes

Select this component when high reliability and automotive-grade certification are mandatory. The device offers robust ESD protection suitable for sensitive environments. Evaluate thermal management requirements carefully, as the small SOT-23 package limits total power dissipation. Verify gate drive voltage compatibility with the threshold characteristics for optimal switching performance.

Part Context

This device belongs to the BSS123L series of N-channel MOSFETs manufactured by onsemi. It shares core electrical specifications with the standard BSS123LT1G but includes additional automotive-specific manufacturing controls. The BVSS prefix indicates adherence to stricter quality and traceability protocols defined by the manufacturer.