BXL4001

Description：MOSFET N-CH 75V 85A TO220
Series：-
Mfr：onsemi
Package：Bulk

SKU:bc649398ec81 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 85A TO220
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：85A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12.4mOhm @ 43A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6700 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.75W (Ta), 75W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220(LS)
Package / Case：TO-220-3

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BXL4001

Overview

The BXL4001 is an N-Channel Silicon MOSFET manufactured by SANYO Semiconductor, now part of onsemi. It features a Drain-to-Source Voltage (V_DSS) of 75 V and a continuous Drain Current (I_D) rating of 85 A at 25°C case temperature. The device exhibits a maximum static Drain-to-Source On-State Resistance (R_DS(on)) of 12.4 mΩ when driven at V_GS = 10 V with I_D = 43 A. Total Gate Charge (Q_g) is specified at 115 nC under identical drive conditions. Power dissipation capabilities are rated at 1.75 W in ambient air and 75 W at the case. The component utilizes a TO-220(LS) package.

Feature Summary

Guaranteed avalanche energy resistance for robust operation in inductive switching environments.
Optimized for low ON-resistance to minimize conduction losses during motor drive applications.
Designed for efficient logic-level driving with a standard 10 V gate drive requirement.

Applications

Motor drive circuits
General-purpose switching devices
Home appliances
Industrial equipment

Procurement Notes

Verify current availability status as the BXL4001 may be discontinued or subject to last-time buy constraints. Confirm that the specific ordering suffix matches the required package variant. Ensure the sourcing channel provides original manufacturer documentation to validate authenticity. Check for RoHS compliance markings if environmental regulations apply to the final assembly. Cross-reference datasheet revision numbers to ensure electrical characteristics align with design requirements.

Selection Notes

Select this component for applications requiring high current handling within a 75 V voltage window. The TO-220(LS) package facilitates through-hole mounting and heatsinking for thermal management. Evaluate the R_DS(on) specifications against the expected load current to determine acceptable power loss. Consider the 10 V gate drive requirement when designing the driver circuit interface. Verify that the avalanche energy ratings meet the inductive load requirements of the target system.

Part Context

This device belongs to the general-purpose N-Channel MOSFET category from SANYO Semiconductor. It is designed for broad industrial and consumer electronics use. The product line emphasizes reliability in standard application environments. It serves as a switching element for power control tasks. The manufacturing history involves SANYO Semiconductor before its acquisition by onsemi.

Replacement Considerations

Public confirmed substitute part numbers include CSD18537NKCS from Texas Instruments and STP60NF06 from STMicroelectronics. Verify pinout compatibility and thermal performance metrics before substitution.