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BYV32EB-200PQ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARRAY GP 200V 20A D2PAK. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for BYV32EB-200PQ
- Description：DIODE ARRAY GP 200V 20A D2PAK
- Series：-
- Mfr：WeEn Semiconductors
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：20A
- Voltage - Forward (Vf) (Max) @ If：1.15 V @ 20 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：25 ns
- Current - Reverse Leakage @ Vr：5 µA @ 200 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for BYV32EB-200PQ
Diode Arrays Overview
The BYV32EB-200PQ is a dual ultrafast power diode manufactured by WeEn Semiconductors, housed in a TO-263 surface-mount package. It features a peak reverse repetitive voltage of 200 V and a maximum continuous forward current of 20 A. The device exhibits a low forward voltage of 0.76 V and a peak reverse recovery time of 18 ns. It supports a peak non-repetitive forward surge current of 125 A and operates within a junction temperature range up to 175°C.
Diode Arrays Feature Summary
- Dual ultrafast rectifier configuration for efficient power integration
- Optimized topology for high efficiency and EMI reduction
- Robust safe-operating-area capability with superior surge tolerance
Diode Arrays Applications
- High-frequency switching power supplies
- DC-DC converter circuits
- Industrial power management systems
Diode Arrays Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS compliance requirements and check for any recent lead-free conversion dates or material content updates before finalizing procurement orders.
Diode Arrays Selection Notes
Select this component for applications requiring fast recovery characteristics and high current handling in a compact surface-mount form factor. Consider the 175°C maximum junction temperature rating for thermal management design. Evaluate the 18 ns reverse recovery time suitability for high-frequency operation constraints.
Diode Arrays Part Context
This part belongs to the BYV32EB series of ultrafast rectifiers from WeEn Semiconductors. The series utilizes planar passivation technology for high-voltage durability. It is designed for general-purpose silicon power diode applications, offering a balance of speed and robustness for modern power electronics.
Diode Arrays Replacement Considerations
Cross-reference with BYV32EB-200PJ for identical electrical performance in reel packaging. Verify pinout compatibility when substituting with other TO-263 dual ultrafast diodes.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.
