Diode Arrays BYVB32-50-E3/81 product image

BYVB32-50-E3/81

$1.37
  • Description:DIODE ARRAY GP 50V 18A TO263AB
  • Series:-

SKU:fc3a7d6d6aaf Category: Brand:

  
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BYVB32-50-E3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 50V 18A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYVB32-50-E3/81

  • Description:DIODE ARRAY GP 50V 18A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):18A
  • Voltage - Forward (Vf) (Max) @ If:1.15 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):25 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYVB32-50-E3/81

BYVB32-50-E3/81

Diode Arrays Overview

The BYVB32-50-E3/81 is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It utilizes glass-passivated pellet chip junctions and is housed in a D2PAK (TO-263AB) surface-mount package. The device supports a maximum average forward rectified current of 18 A at a case temperature of 125 °C, with a peak forward surge current capability of 150 A. It features a maximum repetitive peak reverse voltage of 50 V and an ultrafast reverse recovery time of 25 ns. The typical instantaneous forward voltage drop is 0.85 V at 5 A and 100 °C, while the maximum DC reverse leakage current is 10 μA at 25 °C.

Diode Arrays Feature Summary

  • Glass passivated pellet chip junction for high reliability
  • Ultrafast recovery time enabling low switching losses
  • High forward surge current capability
  • Low forward voltage drop for improved efficiency

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Inverter circuits
  • Freewheeling diodes
  • DC/DC converters

Diode Arrays Procurement Notes

Verify the specific ordering code suffix to confirm the package type and compliance status. The E3 suffix indicates RoHS compliance. Confirm that the D2PAK (TO-263AB) package matches your PCB footprint requirements. Ensure thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for synchronous rectification or freewheeling applications. The 50 V rating suits low-voltage output stages. Verify that the operating ambient temperature allows for proper derating of the 18 A current capacity. Consider the 25 ns reverse recovery time for high-frequency operation to minimize switching losses.

Diode Arrays Part Context

This part belongs to the BYV32 series family, which includes variants with different voltage ratings up to 200 V. The BYVB32 designation specifically identifies the D2PAK (TO-263AB) surface-mount package variant within this series. Other packages in the family include TO-220AB and ITO-220AB.

Diode Arrays Replacement Considerations

Direct substitutes within the same voltage and current class include other BYVB32-50 variants from Vishay, such as those with halogen-free M3 suffixes. Cross-brand replacements must match the 18 A current, 50 V reverse voltage, and 25 ns recovery time specifications.

BYVB32-50-E3/81BYVB32-50-E3/81
$1.37
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