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The C2M0045170D is a Wolfspeed N-channel enhancement mode Silicon Carbide MOSFET utilizing 2nd generation SiC technology. It features a 1700 V drain-source voltage and a maximum continuous drain current of 75 A at 25°C case temperature. The device has a typical on-resistance of 45 mΩ and operates within a junction temperature range of -40°C to +150°C. Packaged in a TO-247-3L through-hole format, it offers low capacitances for high-speed switching.
Verify the specific datasheet revision (Rev. 3, October 2024) matches your design requirements. Confirm that the TO-247-3L package dimensions and mounting torque specifications align with your thermal management strategy. Ensure gate drive voltages remain within the recommended operational limits to maintain device reliability.
Select this component for designs requiring robust high-voltage handling with efficient thermal performance. The TO-247-3L package facilitates easy integration into existing through-hole layouts. Consider the derating curves for continuous current based on your expected case temperatures to ensure safe operation under load.
This part belongs to Wolfspeed's discrete Silicon Carbide MOSFET portfolio, designed to replace silicon counterparts in high-efficiency power systems. The C2M series leverages wide bandgap material properties to achieve superior performance in demanding industrial and renewable energy applications.
No public confirmed substitute part numbers are available in the provided documentation.