C2M0080120D

Description：SICFET N-CH 1200V 36A TO247-3
Series：C2M™
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:0023b32d0306 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 36A TO247-3
Series：C2M™
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：62 nC @ 5 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：192W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C2M0080120D

Overview

The C2M0080120D is a Silicon Carbide (SiC) N-Channel Enhancement Mode Power MOSFET manufactured by Wolfspeed. It features a 1200 V drain-source voltage rating and a maximum continuous drain current of 36 A at 25°C case temperature. The device exhibits a typical on-state resistance of 80 mΩ at VGS = 20 V and ID = 20 A, with a maximum of 98 mΩ. Key electrical parameters include a total gate charge of 71 nC, input capacitance of 1130 pF, and output capacitance stored energy of 50 µJ. Thermal characteristics specify a junction-to-case thermal resistance of 0.60 °C/W. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-247-3 through-hole package.

Feature Summary

High blocking voltage combined with low on-resistance for improved system efficiency
Fast switching capabilities supported by low internal capacitances
Robust avalanche ruggedness for reliable operation under transient conditions
Designed for easy paralleling and straightforward gate drive requirements

Applications

Solar inverters
Switch mode power supplies
High voltage DC/DC converters
Battery chargers
Motor drives

Procurement Notes

Verify the specific manufacturer marking, as products may display either Cree or Wolfspeed branding during the corporate transition period. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements prior to integration. Ensure that the ordering suffix matches the standard TO-247-3 package configuration. Validate that the selected component meets the recommended operational gate voltage specifications outlined in the official datasheet.

Selection Notes

Select this component for high-voltage applications requiring superior thermal performance and reduced cooling infrastructure. The SiC technology enables higher switching frequencies compared to traditional silicon devices. Consider the 1200V rating and low RDS(on) when designing systems focused on increasing power density. Evaluate the gate drive requirements based on the specified 20V turn-on voltage and associated gate charge characteristics.

Part Context

This device belongs to the C2M™ series of Silicon Carbide MOSFETs from Wolfspeed. It represents an evolution in wide-bandgap semiconductor technology, offering significant advantages over conventional silicon counterparts in terms of switching speed and thermal management. The product line is designed to support modern power electronics architectures demanding higher efficiency and compact form factors.