C2M1000170D

Description：SICFET N-CH 1700V 4.9A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:9460e443504a Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1700V 4.9A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id：4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：191 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C2M1000170D

Overview

The C2M1000170D is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET utilizing C2M technology. It features a 1700V drain-source voltage rating and operates with a maximum continuous drain current of 5A at 25°C case temperature, or 3.5A at 100°C. The device has a typical on-state resistance of 0.8Ω (max 1.4Ω) and a total gate charge of 22nC. It supports an operational gate-source voltage range of -5V to +20V and dissipates up to 69W of power. The component functions within a junction temperature range of -55°C to +150°C.

Feature Summary

High-speed switching capability enabled by low capacitances and ultra-low drain-gate capacitance.
Optimized for high blocking voltage combined with low on-state resistance.
Designed for easy paralleling and simple gate driving requirements.
Halogen-free construction compliant with RoHS standards.

Applications

Auxiliary Power Supplies
Switch Mode Power Supplies

Procurement Notes

Verify the specific revision level against the latest official datasheet before finalizing designs. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 1700V with moderate current capabilities around 5A. Consider its low gate charge for efficient driver selection in high-frequency applications. Evaluate the thermal performance based on the provided safe operating area curves and derating factors for your specific ambient environment.

Part Context

This part belongs to the Wolfspeed C2M series of Silicon Carbide MOSFETs. These devices are engineered for high-efficiency power conversion systems. The TO-247-3 package provides a robust mechanical solution for through-hole mounting, suitable for industrial and commercial power electronics where reliability and thermal performance are critical.