C2M1000170J-TR

Overview

The C2M1000170J-TR is a Wolfspeed N-channel enhancement mode Silicon Carbide (SiC) MOSFET housed in a TO-263-7 surface-mount package. It features a maximum drain-source voltage of 1700 V and a continuous drain current of 5.6 A at 25°C case temperature. The device exhibits a typical on-state resistance of 0.8 Ω at 20 V gate drive and 2 A drain current, with a maximum rating of 1.4 Ω at 150°C. Key electrical parameters include a total gate charge of 13 nC, an input capacitance of 215 pF, and a reverse transfer capacitance of 2.2 pF. The intrinsic body diode demonstrates a forward voltage of 3.8 V and a reverse recovery charge of 31 nC. Thermal characteristics specify a junction-to-case thermal resistance of 1.96 °C/W, supporting operation within a -55°C to +150°C junction temperature range.

Feature Summary

• Features a separate Kelvin source pin for optimized gate driver performance and reduced switching noise.
• Incorporates ultra-low drain-gate capacitance and low parasitic inductance to facilitate smooth switching waveforms.
• Provides wide creepage distance between the drain and source terminals for enhanced high-voltage isolation.
• Utilizes a low impedance package design that supports easy paralleling and simple driving requirements.

Applications

• Auxiliary power supplies
• Switch mode power supplies
• High-voltage capacitive loads

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status and REACH SVHC declarations directly with the manufacturer or authorized distributors prior to integration. Ensure the procurement channel provides valid traceability documentation consistent with Wolfspeed quality standards.

Selection Notes

Select this component for applications requiring robust high-voltage blocking capabilities combined with manageable conduction losses. The TO-263-7 package facilitates efficient thermal management through direct mounting to a heatsink. Evaluate the gate drive requirements against the specified 20 V operational limit and consider the internal gate resistance for optimal switching speed control.

Part Context

This part belongs to the C2M™ series of Silicon Carbide power MOSFETs manufactured by Wolfspeed. The series utilizes Wolfspeed's proprietary SiC technology to deliver high-performance switching characteristics suitable for demanding power conversion environments. The product line emphasizes reliability and efficiency improvements over traditional silicon-based alternatives.

Replacement Considerations

The datasheet identifies the C2M1000170D as a related variant sharing identical electrical specifications but utilizing different packaging or reel configuration. Verify mechanical footprint compatibility and thermal interface requirements before substituting either component.

FAQ

What is the recommended operating gate-source voltage range?

The recommended operational gate-source voltage range is -5 V to +20 V, while absolute maximum ratings extend up to +25 V.

How does the on-state resistance vary with temperature?

The on-state resistance increases significantly as the junction temperature rises, reaching a maximum of 1.4 Ω at 150°C compared to a typical 0.8 Ω at 25°C.