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C3D20060D is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is DIODE ARR SIC 600V 27.5A TO247-3. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for C3D20060D
- Description：DIODE ARR SIC 600V 27.5A TO247-3
- Series：Z-Rec®
- Mfr：Wolfspeed, Inc.
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：27.5A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：50 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for C3D20060D
Diode Arrays Overview
The C3D20060D is a third-generation, 600 V Silicon Carbide Schottky diode in a TO-247-3 package. It features a maximum repetitive peak reverse voltage of 600 V and a continuous forward current rating of 55 A per device at 25°C case temperature. The typical forward voltage is 1.5 V at 10 A and 25°C. Key electrical characteristics include zero reverse recovery charge and a total capacitive charge of 24 nC at 400 V. The junction-to-case thermal resistance is typically 0.65 °C/W per device.
Diode Arrays Feature Summary
- Zero reverse recovery current and forward recovery voltage for fast switching
- Temperature-independent switching behavior enabling parallel operation without thermal runaway
- High-frequency operation capabilities
Diode Arrays Applications
- Boost diodes in PFC or DC/DC stages
- Free wheeling diodes in inverter stages
- Switch mode power supplies
- Solar inverters
- AC/DC converters
Diode Arrays Procurement Notes
Verify the specific part number C3D20060D against official Wolfspeed documentation to confirm the active status and technical specifications. Ensure compliance with REACh, RoHS, and Halogen-Free requirements as stated in the datasheet. Confirm that the TO-247-3 tube packaging matches the design needs. Cross-reference the thermal and electrical parameters with the latest revision of the product datasheet before finalizing procurement.
Diode Arrays Selection Notes
Select this component for applications requiring high efficiency and high-frequency operation where silicon-based solutions are insufficient. The zero reverse recovery charge minimizes switching losses, making it suitable for boost and free-wheeling diode roles. Consider the 600 V blocking capability and 55 A current rating for system design. Evaluate the thermal management requirements based on the junction-to-case thermal resistance and derating curves provided in the datasheet.
Diode Arrays Part Context
This component belongs to Wolfspeed's third-generation Silicon Carbide (SiC) Schottky diode family. These devices are designed to offer performance advantages over traditional silicon solutions, including higher efficiency, higher operating frequencies, and greater power densities. The SiC technology allows for reduced cooling requirements and improved thermal performance, contributing to lower overall system costs in diverse power electronics applications.
Diode Arrays Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
Diode Arrays FAQ
Does the C3D20060D exhibit reverse recovery charge?
No, the C3D20060D is a majority carrier device and has zero reverse recovery charge.
Can multiple C3D20060D diodes be paralleled?
Yes, the device features temperature-independent switching behavior, allowing parallel connection without concern for thermal runaway.
What is the maximum junction temperature for the C3D20060D?
The maximum junction temperature (Tj) for the C3D20060D is +175 °C.
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