C3M0016120K

Overview

The C3M0016120K is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, housed in a TO-247-4 package. It features a 1200V drain-source voltage rating and a typical on-resistance of 16mΩ at 25°C. The device supports a continuous drain current of 125A and a pulsed current of 321A. Key electrical parameters include a gate threshold voltage of 2.5V, input capacitance of 6922pF, and reverse recovery charge of 1665nC. Thermal resistance from junction to case is 0.23°C/W, with an operating junction temperature range of -55°C to +175°C.

Feature Summary

• Third-generation SiC MOSFET technology optimized for high-speed switching and low output capacitances.
• Package design includes a separate driver source pin to reduce switching losses and minimize gate ringing.
• Features an 8mm creepage distance between the drain and source terminals.
• Incorporates a fast intrinsic diode characterized by low reverse recovery charge.

Applications

• Solar inverters
• EV motor drive systems
• High voltage DC/DC converters
• Switched mode power supplies

Procurement Notes

Verify the specific ordering suffix 'K' corresponds to the TO-247-4 package configuration when sourcing components. Confirm that the requested units match the latest datasheet revision to ensure accurate electrical parameter alignment. Ensure compliance requirements such as RoHS and Halogen-free status are documented for your supply chain records prior to finalizing procurement orders.

Selection Notes

Select this component for designs requiring high blocking voltage combined with low on-resistance to maximize system efficiency. The separate driver source pin facilitates optimized PCB layouts for reduced parasitic inductance. Evaluate thermal management capabilities against the specified junction-to-case thermal resistance to ensure reliable operation within the maximum allowable junction temperature limits during continuous conduction.

Part Context

This part belongs to the C3M family of Silicon Carbide Power MOSFETs manufactured by Wolfspeed. These devices utilize N-channel enhancement mode technology designed to replace traditional silicon-based solutions. The TO-247-4 package provides robust mechanical mounting and efficient heat dissipation pathways suitable for industrial power electronics applications.

Replacement Considerations

Direct substitutes within the same series include C3M0032120K and C3M0021120K, which offer higher on-resistance values but maintain identical package footprints and voltage ratings. Verify pinout compatibility and thermal characteristics before implementing any cross-references.

FAQ

What is the purpose of the fourth pin in the TO-247-4 package?

The fourth pin serves as a separate driver source connection. This design isolates the power source from the gate drive return path to minimize switching losses and reduce gate ringing.

How does the internal gate resistance affect switching performance?

The device has an internal gate resistance of approximately 2.6 Ohms. External gate resistors can be used in conjunction with this internal value to tune switching speeds and manage electromagnetic interference (EMI) during turn-on and turn-off transitions.