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Product Detailed Parameters
- Description：SICFET N-CH 1200V 100A TO247-4L
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：28.8mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs：162 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：4818 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：469W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The C3M0021120K is a third-generation Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET manufactured by Wolfspeed. It features a TO-247-4L package with a separate driver source pin and an 8mm creepage distance between drain and source. Key electrical parameters include a 1200V drain-source voltage, a maximum on-resistance of 28.8mΩ at 50A and 15V, and a continuous drain current of 100A at 25°C case temperature. The device supports a junction temperature range from -40°C to +175°C.
Feature Summary
- Third-generation SiC MOSFET technology optimized for high-speed switching with low capacitances.
- Package design includes a separate driver source pin to reduce switching losses and minimize gate ringing.
- Features a fast intrinsic diode with low reverse recovery charge (Qrr).
- Halogen-free and RoHS compliant construction.
Applications
- Solar inverters
- EV motor drive systems
- High voltage DC/DC converters
- Switched mode power supplies
- Load switch applications
Procurement Notes
Verify the specific revision level against the manufacturer's datasheet before procurement, as technical specifications may be subject to change without notice. Confirm that the TO-247-4L package dimensions and solder pad layouts match the target PCB design requirements. Ensure compliance with relevant environmental directives such as RoHS and REACH based on the latest product documentation provided by Wolfspeed.
Selection Notes
Select this component for designs requiring high blocking voltage combined with low on-resistance to improve system efficiency. The separate driver source pin facilitates easier layout for reducing parasitic inductance and gate ringing. Consider the thermal resistance characteristics when designing heat dissipation solutions to maintain the junction temperature within the specified operating range during high-current operation.
Part Context
This part belongs to the C3M™ family of discrete Silicon Carbide Power MOSFETs from Wolfspeed. The family utilizes industry-standard packages to allow flexible system upgrades and cost optimization. The C3M0021120K specifically targets applications demanding high power density and increased switching frequencies compared to traditional silicon-based technologies.
Replacement Considerations
Direct replacements within the same series include C3M0016120K and C3M0032120K, which share the TO-247-4L package but offer different on-resistance and current ratings. Verify compatibility with existing gate drive circuits and thermal management systems when substituting these variants.
FAQ
What is the purpose of the fourth pin in the TO-247-4L package?
The fourth pin serves as a separate driver source connection. This design helps reduce switching losses and minimizes gate ringing by isolating the high-current source path from the sensitive gate drive return path.
How does the internal gate resistance affect switching performance?
The internal gate resistance is approximately 3.3 Ω. External gate resistors can be used in conjunction with this internal resistance to tune switching speeds and manage electromagnetic interference (EMI), balancing switching losses against voltage overshoot.
