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Product Detailed Parameters
- Description：MOSFET N-CH 1200V 104A TO247-4L
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：29mOhm @ 62.1A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 17.1mA
- Gate Charge (Qg) (Max) @ Vgs：177 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：405W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The C3M0021120K1 is a Wolfspeed N-channel enhancement mode Silicon Carbide Power MOSFET. It features a 1200V drain-source voltage and a maximum on-resistance of 29mΩ at 25°C. The device operates with a continuous drain current of 104A and supports a junction temperature range from -55°C to +175°C. Packaged in a low-profile TO-247-4L, it includes a separate driver source pin for optimized switching performance.
Feature Summary
- Optimized package design featuring a separate Kelvin source pin to minimize gate ringing and reduce switching losses.
- Low-profile TO-247-4L body construction designed to increase system power density and reduce cooling requirements.
- High-speed switching capabilities combined with low capacitances to facilitate higher system switching frequencies.
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
- Solar and Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific part number suffix against official documentation to confirm package variations or testing conditions. Ensure compliance with RoHS directives and check for REACH SVHC declarations prior to integration. Confirm that the selected component meets all safety and regulatory requirements for the intended application environment.
Selection Notes
Select this component for high-voltage applications requiring low conduction losses and fast switching speeds. The separate driver source pin necessitates specific PCB layout considerations to maximize efficiency. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance and derating curves for continuous operation.
Part Context
This device belongs to the Wolfspeed C3M series of silicon carbide power MOSFETs. It utilizes Wolfspeed's proprietary SiC technology to deliver superior performance compared to traditional silicon devices. The product line focuses on enabling more efficient, compact, and reliable power conversion systems across various industrial and automotive sectors.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided datasheet. Designers should evaluate other Wolfspeed C3M series parts with similar voltage ratings and package types, ensuring compatibility with existing gate drive requirements and thermal constraints.
