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Product Detailed Parameters
- Description：MVF 200MM QUALIFIED MATERIAL
- Series：*
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The C3M0021120U2 is a discrete silicon carbide (SiC) MOSFET from Wolfspeed, rated for 1200V drain-to-source voltage and 21mΩ typical on-resistance. It utilizes the U2 (TSC) package, an industry-standard top-cool surface mount design with high creepage distance. The device supports 116A continuous current at case temperature and handles 500W power dissipation. This component is part of the fifth-generation 1200V SiC portfolio, engineered for industrial applications requiring high efficiency and compact system designs.
Feature Summary
- Top-cooling U2 (TSC) package architecture for optimized thermal management
- High breakdown voltage capability suitable for demanding power electronics
- Low on-resistance characteristics enhancing overall conversion efficiency
- Industrial qualification ensuring reliability in harsh operating environments
Applications
- Industrial motor drives and inverters
- Solar photovoltaic string inverters
- Uninterruptible power supply systems
- High-efficiency DC-DC converters
Procurement Notes
Verify the specific suffix designation when ordering, as variants such as E3M0021120U2-TR may indicate automotive or different packaging configurations. Confirm availability status directly with authorized distributors, as stock levels fluctuate. Ensure the selected reel or cut tape quantity matches production requirements. Cross-reference the manufacturer datasheet to validate pinout compatibility with existing PCB layouts before finalizing procurement decisions.
Selection Notes
Select this component for applications prioritizing high power density and thermal performance in industrial settings. The U2 package facilitates simplified heat sinking compared to traditional through-hole options. Evaluate the 1200V rating against system bus voltages to ensure adequate safety margins. Consider the 21mΩ resistance impact on conduction losses relative to switching frequency requirements. Verify that gate drive capabilities align with the device's switching characteristics for optimal performance.
Part Context
This device belongs to Wolfspeed’s fifth-generation 1200V silicon carbide MOSFET family. It complements other discrete SiC solutions by offering enhanced current density and reduced footprint. The U2 package represents a shift toward top-cooled surface mount technologies, addressing the growing thermal demands of AI data centers and renewable energy infrastructure while maintaining robust electrical isolation standards.
Replacement Considerations
Direct substitutes include other 1200V SiC MOSFETs in comparable packages, such as the C3M0021120K. Verify pinout compatibility and thermal resistance values when considering alternatives. Ensure that any replacement maintains equivalent voltage ratings and current handling capabilities to preserve system integrity without redesigning the power stage.
