C3M0030090K

$39.91

Description：SICFET N-CH 900V 73A TO247-4
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:7701ae2b5ffe Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 900V 73A TO247-4
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：39mOhm @ 35A, 15V
Vgs(th) (Max) @ Id：3.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：1503 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：240W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0030090K

Overview

The C3M0030090K is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET utilizing C3M technology. It features a TO-247-4 package with a separate driver source pin to minimize inductance and switching losses. Key electrical parameters include a drain-source voltage of 900 V, a maximum gate-source voltage of +19 V/-8 V, and an on-state resistance of 30 mΩ at 25°C. The device supports a continuous drain current of 73 A and a pulsed drain current of 200 A. Operating junction temperature ranges from -40°C to +150°C.

Feature Summary

Optimized package design with a dedicated Kelvin source pin for reduced inductance and minimized gate ringing.
High blocking voltage combined with low on-resistance for improved system efficiency.
Fast intrinsic diode characterized by low reverse recovery charge.
Wide creepage distance between drain and source for enhanced isolation.

Applications

Solar inverters
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TO-247-4 package dimensions match the target PCB footprint. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for high-voltage applications requiring robust switching performance. The separate driver source pin is critical for minimizing parasitic inductance in high-frequency circuits. Evaluate the thermal derating curves to ensure the continuous drain current meets system requirements across the full operating temperature range.

Part Context

This part belongs to the Wolfspeed C3M series of discrete Silicon Carbide power MOSFETs. The series utilizes Wolfspeed's proprietary SiC technology to deliver high blocking voltages and low on-resistance. The TO-247-4 package provides a standardized form factor suitable for through-hole mounting and efficient heat dissipation in industrial power electronics.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Designers should evaluate other C3M series devices or comparable 900V SiC MOSFETs based on matching RDS(on), package type, and thermal characteristics.