C3M0045065D

$17.17

Description：GEN 3 650V 45 M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:3ea9c742ca3e Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：GEN 3 650V 45 M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：60mOhm @ 17.6A, 15V
Vgs(th) (Max) @ Id：3.6V @ 4.84mA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1621 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：176W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0045065D

Overview

The Wolfspeed C3M0045065D is a third-generation Silicon Carbide (SiC) MOSFET featuring an N-channel enhancement mode configuration housed in a TO-247-3 package. It provides a drain-source voltage of 650 V and a typical on-resistance of 45 mΩ at 25°C, supporting a continuous drain current of 49 A. The device operates with a junction temperature range from -40°C to +175°C and includes a fast intrinsic diode with low reverse recovery characteristics.

Feature Summary

Third-generation SiC MOSFET technology delivering high blocking voltage combined with low on-state resistance.
High-speed switching capabilities supported by low parasitic capacitances for efficient operation.
Fast intrinsic body diode characterized by minimal reverse recovery charge.
Halogen-free construction compliant with RoHS standards.

Applications

Electric vehicle chargers
Server and telecom power supply units
Uninterruptible power supplies
Solar inverters
Switch-mode power supplies

Procurement Notes

Verify the specific ordering suffix 'D' corresponds to the TO-247-3 through-hole package variant rather than other available configurations. Confirm compliance documentation availability for REACH SVHC requirements prior to integration. Ensure gate drive specifications align with the recommended operational voltage parameters defined in the datasheet.

Selection Notes

Select this component when designing systems requiring high efficiency and reduced cooling demands due to low conduction losses. The TO-247-3 form factor suits applications needing robust thermal performance and ease of paralleling. Evaluate the internal diode characteristics against external Schottky alternatives to optimize system-level power density and switching frequency capabilities.

Part Context

This discrete power transistor belongs to the C3M family of silicon carbide devices manufactured by Wolfspeed. It utilizes advanced wide-bandgap semiconductor technology to outperform traditional silicon counterparts in high-voltage environments. The product line supports various industrial and commercial power conversion topologies requiring reliable high-temperature operation.

Replacement Considerations

Cross-reference with other C3M series variants such as C3M0045065K or C3M0045065J if different packaging or qualification levels are required. Verify pinout compatibility and thermal resistance values when substituting similar 650V SiC MOSFETs from alternative manufacturers.