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Product Detailed Parameters
- Description：SICFET N-CH 750V 35A TO247
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：78mOhm @ 13.4A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 3.67mA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 15 V
- Vgs (Max)：-8V, +19V
- Input Capacitance (Ciss) (Max) @ Vds：1203 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：126W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The Wolfspeed C3M0060075K1 is a silicon carbide (SiC) N-channel enhancement mode power MOSFET housed in a low-profile TO-247-4L LP package. It features a 750 V drain-source voltage rating and a maximum continuous drain current of 35 A at 25°C case temperature. The device exhibits a typical on-state resistance of 60 mΩ and a total gate charge of 52 nC. Designed for high-speed switching, it includes a separate driver source pin to minimize gate ringing and reduce switching losses.
Feature Summary
- Optimized low-profile TO-247-4L LP package with a dedicated driver source pin to reduce switching losses and minimize gate ringing.
- High blocking voltage combined with low on-resistance to enhance system efficiency and increase power density.
- Fast intrinsic diode with low reverse recovery characteristics suitable for hard-switching applications.
- Halogen-free and RoHS compliant construction.
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
- Solar Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific ordering suffix K1 to confirm the low-profile TO-247-4L LP package configuration. Ensure compatibility with recommended operational gate voltages of 15V and negative turn-off voltages as specified in application notes. Confirm thermal management requirements align with the junction-to-case thermal resistance data provided in the datasheet.
Selection Notes
Select this component for designs requiring 750 V blocking capability with optimized switching performance. The separate driver source pin makes it suitable for high-frequency topologies where minimizing parasitic inductance effects is critical. Consider the 35 A continuous current rating against derating curves for expected case temperatures.
Part Context
This discrete SiC MOSFET belongs to Wolfspeed's portfolio designed to support flexible system upgrades across various power ranges. It utilizes industry-standard packaging to facilitate cost-effective design optimization while delivering superior thermal and electrical performance compared to traditional silicon devices.
Replacement Considerations
Cross-reference with other Wolfspeed TO-247-4 packages such as the C3M0060075D or C3M0045075K1 if different current ratings or standard package heights are required. Verify pinout compatibility before substituting with non-Wolfspeed equivalents.
