C3M0065090D

$17.10

Description：SICFET N-CH 900V 36A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:e036847351b9 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 900V 36A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：30.4 nC @ 15 V
Vgs (Max)：+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0065090D

Overview

The C3M0065090D is a Wolfspeed N-channel enhancement mode Silicon Carbide (SiC) MOSFET. It features a 900 V drain-source voltage and a maximum continuous drain current of 36 A at 25°C case temperature. The device has a typical on-resistance of 65 mΩ and a maximum of 78 mΩ. It operates within a junction temperature range of -55°C to +150°C, with a power dissipation rating of 125 W. The component utilizes a TO-247-3 package.

Feature Summary

Utilizes Wolfspeed C3M SiC technology for high blocking voltage and low on-resistance.
Features fast intrinsic diode characteristics with low reverse recovery charge.
Designed for high-speed switching operations with low capacitances.

Applications

Renewable energy systems
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TO-247-3 package dimensions match the target PCB footprint requirements. Ensure gate drive voltages align with the specified operational limits to prevent device damage during procurement and integration.

Selection Notes

Select this component for applications requiring high efficiency and increased power density. The wide operating temperature range supports demanding thermal environments. Evaluate the system's cooling capabilities against the 125 W power dissipation limit to ensure reliable operation under expected load conditions.

Part Context

This part belongs to the C3M series of discrete Silicon Carbide MOSFETs from Wolfspeed. These devices are engineered to replace traditional silicon components in high-voltage power conversion circuits. The series offers improved performance metrics compared to previous generations, supporting modern power electronics design goals.

Replacement Considerations

Consult official Wolfspeed documentation for verified substitute part numbers. Do not assume direct pin-to-pin compatibility with other manufacturers' devices without rigorous electrical validation.