C3M0065090J

$14.77

Description：SICFET N-CH 900V 35A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:9d43235f312b Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 900V 35A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：113W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0065090J

Overview

The C3M0065090J is a Wolfspeed N-channel enhancement mode Silicon Carbide (SiC) MOSFET housed in a TO-263-7L surface-mount package. It features a 900 V drain-source voltage rating and a maximum continuous drain current of 35 A at 25°C case temperature. The device exhibits a typical on-state resistance of 65 mΩ and supports an operating junction temperature range from -55°C to +150°C. Key electrical characteristics include a gate threshold voltage between 1.8 V and 3.5 V, a total gate charge of 30 nC, and a power dissipation capacity of 113 W.

Feature Summary

New low impedance package with dedicated driver source pin
High blocking voltage combined with low on-resistance
Fast intrinsic diode with low reverse recovery charge
Wide creepage distance between drain and source

Applications

Renewable energy systems
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies

Procurement Notes

Verify the specific ordering suffix 'J' corresponds to the TO-263-7L surface mount package variant. Confirm RoHS compliance status and REACH SVHC declarations directly with Wolfspeed representatives or official documentation channels prior to procurement. Ensure application requirements align with the specified thermal and electrical limits.

Selection Notes

Select this component for designs requiring high-voltage switching with minimized conduction losses. The Kelvin source pin facilitates low-inductance gate driving, reducing switching losses and minimizing gate ringing. Evaluate system efficiency gains against the requirement for wide creepage distances suitable for high-pollution environments.

Part Context

This part belongs to the C3M series of third-generation Silicon Carbide MOSFETs from Wolfspeed. It utilizes Wolfspeed's proprietary SiC technology to deliver superior performance compared to traditional silicon devices. The product line focuses on enabling higher power densities and increased switching frequencies in industrial and automotive applications.