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Product Detailed Parameters
- Description：SICFET N-CH 1200V 30A TO263-7
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：113.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed C3M0075120J-TR is a third-generation silicon carbide (SiC) MOSFET in a TO-263-7 package. It features an N-channel enhancement mode configuration with a drain-source voltage of 1200 V and a maximum gate-source voltage of +19 V/-8 V. The device provides a typical on-resistance of 75 mΩ at 25°C, supporting a continuous drain current of 30 A and a pulsed current of 80 A. Operating junction temperatures range from -55°C to +150°C.
Feature Summary
- Third-generation SiC MOSFET technology designed for high-speed switching with low capacitances.
- Low impedance package architecture incorporating a dedicated driver source pin to minimize gate ringing.
- High blocking voltage capability combined with low on-resistance for improved system efficiency.
- Fast intrinsic diode characterized by low reverse recovery charge.
Applications
- Renewable energy systems
- EV battery chargers
- High voltage DC/DC converters
- Switch mode power supplies
Procurement Notes
Verify the specific ordering suffix '-TR' against official documentation to confirm reel packaging specifications. Ensure compatibility with recommended solder pad layouts provided in the datasheet. Confirm RoHS compliance status through official channels prior to integration into production environments.
Selection Notes
Select this component for designs requiring high-voltage handling with minimized switching losses. Evaluate thermal management requirements based on the specified junction temperature limits. Consider the dedicated Kelvin source pin for optimized gate drive circuitry to fully leverage the low impedance package benefits.
Part Context
This part belongs to the Wolfspeed C3M series of silicon carbide power MOSFETs. It utilizes advanced third-generation technology to deliver superior performance compared to previous iterations. The TO-263-7 package facilitates surface mount installation while maintaining robust electrical isolation characteristics.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Cross-referencing with other Wolfspeed SiC MOSFET models requires careful evaluation of pinout compatibility and electrical parameter alignment.
FAQ
What is the purpose of the separate driver source pin?
The dedicated driver source pin reduces impedance in the gate drive loop, which helps minimize gate ringing during high-speed switching operations.
How does the internal diode perform regarding reverse recovery?
The intrinsic body diode is engineered for fast switching with low reverse recovery charge, contributing to reduced switching losses in hard-switching applications.
