C3M0120065K

$7.64

Description：650V 120M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:b31ce7bf4b08 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：650V 120M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id：3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：98W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0120065K

Overview

The C3M0120065K is a N-channel enhancement mode Silicon Carbide (SiC) MOSFET from Wolfspeed, utilizing C3M technology. It features a TO-247-4 package with separate driver and power source pins. Key electrical parameters include a drain-source voltage of 650 V, a maximum on-resistance of 157 mΩ at 25°C, and a continuous drain current of 22 A at 25°C case temperature. The device supports an operating junction temperature range of -40 to +175 °C.

Feature Summary

Optimized package design with separate driver source pin to minimize gate ringing and switching losses
High blocking voltage combined with low on-resistance for improved system efficiency
Fast intrinsic body diode with low reverse recovery charge suitable for hard-switched applications
Halogen-free and RoHS compliant construction

Applications

Solar inverters
DC/DC converters
Switch Mode Power Supplies
EV battery chargers
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TO-247-4L package dimensions match the target PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for high-frequency power conversion circuits requiring robust performance at elevated temperatures. The separate Kelvin source pin facilitates precise gate drive control, reducing parasitic inductance effects. Evaluate the trade-off between conduction losses and switching frequencies based on the provided capacitance and energy loss characteristics.

Part Context

This part belongs to the Wolfspeed C3M series of third-generation silicon carbide MOSFETs. It is designed to replace traditional silicon-based devices in high-voltage applications, offering superior thermal conductivity and breakdown field strength. The product line focuses on reducing system size and weight through higher power density capabilities.

Replacement Considerations

Direct substitutes within the same family include C3M0090065K and C3M0065065K, which offer lower on-resistance but may have different current ratings. Cross-family replacements like the E3M series require verification of automotive qualification status if applicable.