C3M0120090D

$12.01

Description：SICFET N-CH 900V 23A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:50ce77031a61 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 900V 23A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id：3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：17.3 nC @ 15 V
Vgs (Max)：+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds：414 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：97W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0120090D

Overview

The Wolfspeed C3M0120090D is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET featuring C3M technology. It provides a drain-source voltage of 900 V and a maximum continuous drain current of 23 A at 25°C case temperature. The device exhibits a typical on-state resistance of 120 mΩ, with a maximum rating of 155 mΩ. Operating within a junction temperature range of -55°C to +150°C, it delivers a power dissipation capacity of 97 W. Key electrical characteristics include a total gate charge of 21 nC and an output capacitance stored energy of 10.6 µJ.

Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
Fast intrinsic diode with low reverse recovery charge for reduced switching losses
High-speed switching capability supported by low parasitic capacitances
Halogen-free and RoHS compliant construction

Applications

Renewable energy systems
EV battery chargers
High voltage DC/DC converters
Switch mode power supplies
Lighting applications

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-247-3 package dimensions align with the target PCB footprint and thermal management requirements. Ensure the selected operating conditions remain within the absolute maximum ratings defined in the electrical characteristics table.

Selection Notes

Evaluate the thermal impedance from junction to case to determine appropriate heatsinking solutions for the intended duty cycle. Consider the negative temperature coefficient of the on-resistance when designing parallel configurations or managing thermal loads. Verify that the gate drive voltage levels match the recommended operational parameters to ensure optimal switching performance and reliability.

Part Context

This component belongs to the C3M series of discrete silicon carbide MOSFETs manufactured by Wolfspeed. The series utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices. The TO-247-3 package provides a standardized form factor suitable for through-hole mounting in various industrial and commercial power electronics designs.

Replacement Considerations

Cross-reference alternative part numbers only if they share identical voltage, current, and package specifications. Verify that any substitute device meets the same thermal and electrical performance criteria required by the original circuit design.