C3M0160120J

$8.59

Description：SICFET N-CH 1200V 17A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:0d346d1a4823 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 17A TO263-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id：3.6V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：632 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0160120J

Overview

The Wolfspeed C3M0160120J is a third-generation Silicon Carbide (SiC) MOSFET featuring an N-channel enhancement mode configuration. It operates with a drain-source voltage of 1200 V and delivers a continuous drain current of 17 A at 25°C case temperature. The device exhibits a maximum on-resistance of 208 mΩ at 25°C and 256 mΩ at 150°C. Key electrical parameters include a gate threshold voltage ranging from 1.8 V to 3.6 V, total gate charge of 24 nC, and output capacitance stored energy of 22.5 µJ. It supports a junction temperature range of -55°C to +150°C and utilizes a TO-263-7 surface-mount package.

Feature Summary

Third-generation SiC technology providing high blocking voltage combined with low on-resistance for improved efficiency.
Low impedance package design incorporating a dedicated driver source pin to minimize gate ringing and switching losses.
Fast intrinsic body diode characterized by low reverse recovery charge and peak current.
High creepage distance between drain and source terminals enhancing insulation robustness.

Applications

Renewable energy systems
High voltage DC/DC converters
Switch Mode Power Supplies
Uninterruptible Power Supplies

Procurement Notes

Verify the specific ordering suffix 'J' corresponds to the TO-263-7 package variant when sourcing. Confirm RoHS compliance status and REACH SVHC declarations directly with the manufacturer or authorized distributors prior to integration. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component for applications requiring high-voltage operation up to 1200 V with moderate current handling capabilities around 17 A. The inclusion of a Kelvin source pin facilitates precise gate drive control, making it suitable for high-frequency switching environments where minimizing parasitic inductance effects is critical for system stability and performance.

Part Context

This device belongs to the C3M series of Silicon Carbide power MOSFETs manufactured by Wolfspeed. It represents the company's third-generation Solicon technology platform, designed to offer superior performance metrics compared to previous iterations. The product line targets industrial and automotive-grade power electronics demanding high reliability and efficiency.