C3M0280090J

$7.80

Description：SICFET N-CH 900V 11A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:7e73e6d98dea Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 900V 11A D2PAK-7
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id：3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 15 V
Vgs (Max)：+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0280090J

Overview

The C3M0280090J is a N-channel enhancement mode Silicon Carbide (SiC) MOSFET from Wolfspeed, housed in a TO-263-7 package. It features a 900 V drain-source voltage rating and a maximum gate-source voltage of +19 V transient. The device exhibits a typical on-state resistance of 320 mΩ at 25°C and 416 mΩ at 150°C. Continuous drain current reaches 11 A at 25°C case temperature. Key electrical parameters include a total gate charge of 10 nC, input capacitance of 204 pF, and output capacitance stored energy of 5.5 µJ. Thermal resistance from junction to case is 2.5 °C/W.

Feature Summary

New low impedance package with dedicated driver source pin
Fast intrinsic diode with low reverse recovery characteristics
Wide creepage distance between drain and source

Applications

Renewable energy systems
High voltage DC/DC converters
Telecom power supplies
Induction heating

Procurement Notes

Verify the specific part number against official Wolfspeed documentation to confirm the TO-263-7 package configuration and J suffix designation. Ensure compatibility with recommended operating conditions, including the specified operational gate-source voltage range and thermal management requirements for reliable performance.

Selection Notes

Select this component for high-voltage applications requiring low switching losses and high efficiency. Consider the 900 V blocking capability and fast body diode characteristics for hard-switching topologies. Evaluate thermal design based on the 2.5 °C/W junction-to-case resistance and derating curves for continuous operation.

Part Context

This device belongs to the C3M family of Silicon Carbide MOSFETs, representing Wolfspeed's third-generation SiC technology. It is designed to replace silicon-based solutions in high-power density systems, offering superior thermal performance and switching speeds compared to traditional materials.