C4H22W500AY

Overview

The C4H22W500AY is a 500 W GaN packaged asymmetric Doherty power transistor designed for base station applications. It operates within the frequency range of 2110 MHz to 2170 MHz, delivering 16 dB gain at 50 V drain voltage. The device utilizes SOT1273-1 packaging and features two N-channel configurations.

Feature Summary

• Gallium Nitride (GaN) technology for high-power RF performance
• Asymmetric Doherty architecture optimized for efficiency
• Designed specifically for cellular base station transmitter stages

Applications

• Cellular base station power amplifiers
• Wireless communication infrastructure transmitters
• RF power generation in mobile network equipment

Procurement Notes

Verify the complete datasheet directly from Ampleon or authorized distributors to confirm electrical characteristics and thermal requirements. Ensure compatibility with existing bias networks and matching circuits. Check for specific ordering suffixes that may indicate tape-and-reel packaging variations or environmental compliance status before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2110–2170 MHz band. The asymmetric Doherty design suits systems needing improved power-added efficiency under back-off conditions. Evaluate thermal management capabilities due to the 500 W output power rating and ensure the PCB layout supports the SOT1273-1 package footprint.

Part Context

This part belongs to Ampleon's portfolio of RF power semiconductors targeting wireless communication markets. It represents a specialized solution for modern base stations, leveraging GaN material properties to achieve higher power density compared to traditional LDMOS technologies in similar frequency ranges.

Replacement Considerations

The C4H22P400A is a related 400 W variant operating across a broader 1800–2200 MHz range. Direct substitution requires verification of frequency alignment and power handling differences.