C4H2327N110AX

Overview

The C4H2327N110AX is a broadband RF power transistor manufactured by Ampleon USA Inc. utilizing GEN9 LDMOS technology. It operates within the frequency range of 2.3 GHz to 2.69 GHz, delivering an output power of 100 W and providing a gain of 15 dB. The device features excellent digital pre-distortion capability and high efficiency, designed for broadband operation with lower output capacitance to improve performance in Doherty configurations.

Feature Summary

• Excellent digital pre-distortion capability
• High efficiency design
• Lower output capacitance for improved Doherty performance

Applications

• Broadband RF power amplification
• Base station applications
• Doherty amplifier architectures

Procurement Notes

Verify the specific ordering suffix against the official Ampleon datasheet to ensure correct package and thermal specifications. Confirm that the component matches the required GEN9 LDMOS technology generation. Cross-reference the frequency band and power ratings with system requirements before procurement.

Selection Notes

Select this component for applications requiring high linearity and efficient broadband operation between 2.3 GHz and 2.69 GHz. Consider its low output capacitance if designing Doherty amplifiers. Ensure the PCB layout supports the thermal requirements of a 100 W LDMOS device.

Part Context

This part belongs to the C4H series of broadband transistors from Ampleon. It utilizes advanced GEN9 LDMOS technology, distinguishing it from older generations with improved efficiency and distortion characteristics. It serves as a key component for modern wireless infrastructure.

Replacement Considerations

Direct substitutes include other Ampleon GEN9 LDMOS devices such as the C4H2327N110A or C4H2327N110AZ, provided they meet the same electrical and thermal specifications. Verify pin compatibility and package dimensions before substitution.