C4H2350N10Z

Overview

The C4H2350N10Z is a gallium nitride (GaN) radio-frequency power transistor designed for massive MIMO applications. It operates within the 2300–5000 MHz frequency range and delivers a peak output power of 10 W at a drain-source voltage of 50 V. The device exhibits a drain efficiency of 15.5% and provides a gain of 19 dB. It is housed in a compact DFN-4.5x4 package with a six-terminal outline, facilitating integration into space-constrained wireless infrastructure systems.

Feature Summary

• Utilizes gallium nitride technology for high-performance RF amplification
• Optimized for massive MIMO base station architectures
• Features a compact surface-mount package design

Applications

• Massive MIMO driver stages
• Wireless infrastructure base stations
• 5G New Radio deployments

Procurement Notes

Verify the specific ordering suffix 'Z' against official Ampleon documentation to confirm any distinct manufacturing or testing variations compared to the standard C4H2350N10 part number. Ensure compatibility with required thermal management solutions for the DFN-4.5x4 package during procurement planning.

Selection Notes

Select this component for designs requiring discrete GaN performance in the 2.3 to 5 GHz bands. Evaluate the 10 W peak power capability against system linearity requirements. Confirm that the 50 V supply voltage aligns with the target amplifier topology and biasing constraints.

Part Context

This device belongs to Ampleon's discrete GaN portfolio for massive MIMO systems. It complements higher-power DFN variants like the C4H2327N series. The naming convention indicates a 50 V GaN die intended for multi-band operation up to 5 GHz.

Replacement Considerations

The C4H2350N10 is listed as the primary equivalent. Verify pinout and thermal characteristics before substituting.