C4H27F400AVY

Overview

The C4H27F400AVY is a Gallium Nitride (GaN) on Silicon Carbide High Electron Mobility Transistor (HEMT) designed for high-power radio frequency applications. It operates within the frequency range of 2.496 GHz to 2.69 GHz, delivering a maximum output power of 400 W with a gain of approximately 14.5 dB to 15.1 dB. The device requires a drain voltage of 48 V and utilizes an OMP-780-4F package, also identified as SOT1249B or DFM6. This component is specifically engineered for base station infrastructure.

Feature Summary

• Packaged asymmetric Doherty power transistor architecture
• Gallium Nitride on Silicon Carbide HEMT technology
• Optimized for chassis mounting via specific package design

Applications

• Base station RF amplification
• Asymmetric Doherty power amplifier stages
• Wireless infrastructure systems operating at 2.496–2.69 GHz

Procurement Notes

Verify the exact package designation against the manufacturer's latest datasheet, as references vary between OMP-780-4F, SOT1249B, and DFM6. Confirm that the 48V drain voltage requirement aligns with your system design. Ensure compatibility with asymmetric Doherty load modulation networks. Request chemical content documentation if environmental compliance is required for your manufacturing process.

Selection Notes

Select this component when designing base station transmitters requiring 400W output in the 2.5 GHz band. The GaN substrate provides thermal advantages over traditional LDMOS technologies. Consider the specific package footprint for chassis integration. Evaluate the need for digital pre-distortion capabilities inherent to modern RF power devices in this class.

Part Context

This part belongs to Ampleon's C4H series of RF power transistors targeting wireless infrastructure. It complements other models like the C4H27F700AV, which offers higher power but different specifications. The series focuses on broadband operation and efficiency improvements for next-generation cellular network deployments.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. The C4H27F700AV shares the same frequency range and application type but differs significantly in output power (700W vs 400W). Verify pinout and thermal characteristics before considering any cross-replacement.