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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The C5H2350N10X is a GaN RF power transistor designed for massive MIMO applications. It operates across the 1800–5000 MHz frequency range with a peak output power of 10 W at a drain-source voltage of 48 V. The device achieves a drain efficiency of 13% and provides a gain of 15.8 dB. Packaged in a compact DFN-4.5x4 form factor, it supports high line-up gain requirements for modern wireless infrastructure.
Verify the exact ordering suffix against the manufacturer's current catalog to ensure correct package and electrical specifications. Confirm RoHS compliance status directly with the supplier before finalizing procurement orders.
Select this component when designing for wideband coverage from 1800 MHz to 5000 MHz. Ensure the design accommodates the specific thermal requirements of the DFN-4.5x4 package and matches the 48 V supply voltage constraints.
This part belongs to Ampleon's discrete GaN portfolio for massive MIMO systems. It complements higher-power finals and lower-frequency LDMOS options within the broader wireless infrastructure product lineup.
No public substitute part numbers are documented in the provided source material.