SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Ampleon C5H2350N10Z is a high-power RF LDMOS transistor designed for base station applications. It operates at frequencies up to 960 MHz with a drain voltage of 28 V. The device delivers an output power of 2350 W and achieves a power gain of 17 dB under standard test conditions. Key electrical parameters include a DC drain current of 45 A and a typical efficiency of 65%. The component utilizes a robust ceramic package suitable for high-temperature environments, ensuring reliable performance in demanding wireless infrastructure systems.
Verify the specific manufacturer datasheet for detailed absolute maximum ratings and thermal resistance values before integration. Confirm that the supply chain source provides authentic components with traceable documentation. Ensure compatibility with existing cooling solutions given the high power dissipation requirements of this class of device.
Select this component when designing amplifiers requiring high output power within the sub-1 GHz frequency range. Evaluate the thermal interface material and heatsink design carefully to maintain junction temperatures within safe operating limits. Consider the drive power requirements relative to the specified gain to ensure optimal system efficiency and linearity.
This part belongs to Ampleon's portfolio of high-power LDMOS transistors specifically engineered for telecommunications. These devices are critical for maintaining signal integrity and coverage in modern cellular networks. The technology leverages advanced semiconductor processes to balance power handling with thermal stability.
Direct replacements must match the 2350 W output power and 28 V drain voltage specifications. Verify pinout compatibility and package dimensions to ensure mechanical fit. Consult official substitution guides from Ampleon or authorized distributors for validated equivalent parts.